Magnesium selenide thin film deposited by SILAR technique at room temperature.

Abstract

Magnesium selenide thin films have been deposited on to glass substrates by successive ionic layer adsorption and reaction deposition technique by varying number of deposition cycles. Structural characterization of magnesium selenide thin films was carried out by means of X-ray diffraction. Morphological characterization of magnesium selenide thin film was carried out using scanning electron microscope and EDAX. The deposited thin films excited the optical energy band gap is 2.85 eV. The electrical resistivity of thin film at room temperature is of the order of 52 x 10² Ω-cm with activation energy.