Analysis of Photoelastic behavior of ANB8-N Type Binary Solids Using Ionicity Parameters

Abstract

The strain derivatives of electronic dielectric constant are related to the Photoelastic behavior of Solids, have been studied with the help of iconicity parameters for binary Solids .Values of iconicity parameters have been obtained using revised energy gap model due to Grimes and Cowley. We have used a power law as well as exponential law for representing the dependence of homopolar energies on interionic distances. Values of fractional ionic character of the chemical bond have also been calculated for A^NB^8-N type Binary Solids and the same has related to the Photoelastic behavior for the A^NB^8-N type Binary Crystals.